Abstract
The recent success in the growth of the II-VI class of semiconducting compounds by molecular beam epitaxy (MBE) has resulted in a sharp increase of interest in these materials and in their potential use. In addition, integration of several device functions onto a common substrate material (for example CdTe on GaAs or ZnSe on GaAs) is an area of focus for the optoelectronic community. One of the more important areas for appli cation of high quality II-VI films is infrared imaging where CdTe deposited by MBE onto GaAs substrates is proposed as the substrate for subsequent (Rg, Cd)Te and RgTe/CdTe superlattice deposition. Interest in the wide gap II-VI compounds is stimulated by the need for electronically address able flat panel display devices and for the development of wide gap (blue) LED and injection laser devices. For applications in the blue portion of the visible spectrum, Zn�e and ZnS have long been the favored candidates. Very high quality ZnSe has been grown by MBE. The optical character-
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