Abstract
A semiempirical pseudopotential approach is developed for the electronic structure of zincblende semiconductors. The merit of this approach, which has given good results for the electronic structure of semiconductor surfaces, is considered. Here we analyse the results for the unrelaxed and various relaxed geometries of the clean (110) surface of InP. In particular, we present the dispersion of true surface states along various symmetry directions in the surface Brillouin zone. Our calculations coupled with the recent angle-resolved photoemission measurements provide a means of supporting the surface structural models from energy minimization calculation and low-energy-electron diffraction studies.
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