Abstract
We propose in this work a structure of semiconductor thin films combined with a one-dimensional metallic grating which allows for selective improvement of thermal radiative absorptivity (also emissivity) of the structure. We numerically demonstrate with a 2-D rigorous coupled-wave analysis (RCWA) algorithm that the proposed structure exhibits enhanced spectral absorptivity (for p-polarization) for photon energy slightly above the gap energy of the semiconductor (silicon in this work). The enhanced absorptivity is explained as due to excitations of surface polaritons (SPs) in the grating region, along with interactions of multiple-order diffracted waves in the semiconductor layer. Furthermore, the enhanced absorptivity of the structure can be achieved for a wide range of incidence angles so that it may have potential applications in energy conversion purposes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
