Abstract
The shortening of the absorption recovery time by a factor of more than 50 is observed for the semiconductor nanostructure consisting of ten GaAs/In x Ga1-x As/GaAs quantum wells irradiated with the nanosecond pulses of the XeCl laser.A possible reason for such a significant variation in the optical properties lies in the generation of point defects,which are responsible for recombination of charge carriers.The result can be employed in the UV photomodification of optical properties of semiconductor nanostructures.
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