Abstract
IR laser spectral analysis was applied to determine oxygen concentration and its distribution in silicon wafers at room temperature by the method of scanning semiconductor laser spectroscopy. Pb 1− x Sn x Te injection lasers whose emitted wavelength was varied in the region of λ≅9.1 μm by current impulses of different duration and amplitude were used as sources. The whole area under an absorption curve was used to determine the absorption coefficient by all the oxygen complexes and then to calculate the oxygen concentration. The possibility of observing the oxygen complexes of different configuration by this method even at room temperature was demonstrated.
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