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Abstract
Semiconductor InGaAs/GaAs injection lasers emitting at λ = 1065 nm have been created with waveguides based on a single InGaAs quantum well. It is found that internal optical losses are determined by the width of an undoped region confined between the n and p type emitters. The room-temperature total output optical power in lasers with 100 μm aperture amounted up to about 2 W at a radiation beam divergence of 15° in the plane perpendicular to the p-n junction.
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