Semiconductor EuS–PbS ferromagnetic multilayers

Abstract

AbstractEuS–PbS ferromagnetic multilayers constitute all‐semiconductor ferromagnetic‐nonmagnetic structures with magnetic layers of EuS (a model nonmetallic ferromagnet) and diamagnetic layers of PbS (IV–VI narrow gap semiconductor compound). The ferromagnetic transition temperature in EuS–PbS multilayers depends on the thickness of the magnetic layer as well as on thermal strain. For ultrathin PbS spacer layers one observes in EuS–PbS–EuS trilayers and superlattices pronounced magnetic effects related to the antiferromagnetic interlayer coupling between ferromagnetic layers of EuS via nonmagnetic semiconductor PbS spacer. These effects are discussed for EuS–PbS structures grown epitaxially on various substrates: insulating KCl(100) and BaF2(111) as well as conducting n‐PbS(100) monocrystals.