Semiconductor device physics and modelling. Part 2: Overview of models and their applications

Abstract

For pt.1 see ibid., vol.139, no.6, p.645-54 (1992). The classic semiconductor device models are reviewed and discussed. They include the generic models for more accurate device modeling such as the Linvill lumped-circuit model and the Sah transmission-line circuit model, and the conventional models aimed at predicating the first-order device behaviour, such as the drift-diffusion model. Specific applications of these models on an n-p junction diode are illustrated. The increasingly important Monte Carlo simulation, which is a numerical technique for solving the Boltzmann transport equation, and which has become a standard method for simulating free-carrier transport in advanced semiconductor devices, is also briefly reviewed and discussed.