Abstract
Polycrystalline Dy thin films, coated with a very thin Pd layer, have been deposited on glass substrates by electron beam evaporation and subsequently hydrided. For hydrogen partial pressures larger than 0.7 kPa, a semiconductor character is displayed in the optical properties of the DyH 2 + x thin films. A parametric model is applied to follow the evolution with hydrogen pressure of various parameters characterizing the absorption by the semiconductor DyH 2 + x thin films. The contribution of the free electrons to the absorption of light is also considered within a Drude model incorporating the presence of the hydrogen atoms as ionized impurity scattering centers.
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