Abstract
Semi-insulating GaAs material results from the compensation of residual acceptor impurities and intrinsic defects by the so-called EL2 donor defects which possess a level at midgap. A semi-insulating layer can therefore be produced if it is possible to introduce a large enough concentration of EL2 defects. We describe a vapor-phase epitaxy technique which allows to introduce an EL2 concentration in the range 1015–1016 cm−3. This technique is made to reach very large growth rates, based on the fact that the EL2 concentration increases with the growth rate. The variation of the EL2 concentration versus the various growth parameters (substrate temperature, partial pressure, growth rate) have been monitored. The mechanism by which the incorporation of EL2 defects occurs has been determined, thus allowing one to get a given EL2 concentration reproducibly. This technique of growth, being inexpensive and fast, requiring no toxic gases, appears to be a reasonable alternative to the production of semi-insulating substrates.
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