Semi-insulating bulk GaAs as a semiconductor thermal-neutron imaging device

Abstract

Thermal-neutron Schottky barrier detector arrays fabricated from semi-insulating bulk GaAs are presently being tested. The devices use a film of 10B to convert the incident thermal-neutron field into α particles and lithium ions, either of which interact in the detector. Bulk GaAs Schottky barrier detectors are relatively radiation hard to thermal neutrons and γ rays and have shown reasonably good energy resolution for α particles. Additionally, reverse biased radiation detectors fabricated from semi-insulating bulk GaAs have been shown to have truncated electric field distributions, resulting in the formation of a high field active region and a considerably lower field dead region. The device is sensitive only to electron-hole pairs excited in the high field region, thus the truncated field effect is advantageous as an inherent γ-ray discrimination feature for neutron detectors. Preliminary results show no indication of device degradation after over 2400 hr in a thermal-neutron beam from a reactor. Images have been formed of 1, 1.5, and 2 mm holes and crosses from 2 mm thick Cd templates.