Abstract
Abstract Laser operation-induced migration of beryllium at mirrors of single quantum well, ridge geometry type GaAs/AlGaAs diode lasers was studied by electron-beam-induced current. In these devices an operation-induced displacement of the p - n junction towards the n -type cladding has been observed close to the mirrors. A similar effect was induced by electron-beam irradiation of the mirror facets in a scanning electron microscope. These effects have been attributed to recombination-enhanced diffusion/migration of beryllium from the p -type cladding. From the measured diffusion coefficient of beryllium we have estimated the average mirror temperature during laser operation, which was found to be in excellent agreement with measured temperatures published recently.
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