Abstract
Self-pulsating InGaN laser diodes with a p-type InGaN saturable absorber (SA) layer are demonstrated. The SA layer consists of a 1-nm-thick p-type InGaN well surrounded by 2-nm-thick p-type In0.02Ga0.98N barriers. The lower barrier of the SA is located on the 18-nm-thick p-type Al0.3Ga0.7N evaporation-prevention layer of the active region. Self-pulsation is demonstrated for output powers in the range 4 to 22 mW with corresponding self-pulsation frequencies in the range 1.6 to 2.9 GHz. Results indicate that the position of the SA layer in the structure has a strong influence on the carrier lifetime and is responsible for the observation of self-pulsation in these devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
