Abstract

In this paper, the self-heating effect (SHE) is investigated in single nanosheet to stacked multi-nanosheet channels using the 3D electrothermal module of the Sentaurus TCAD simulation tool. The non-uniform lattice temperature (TL) distribution is observed in the junctionless multi-nanosheet FET. The device performance is enhanced by ~5% when the nanosheet is stacked from a single to three nanosheets, but the maximum lattice temperature (T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Lmax</inf> ) also increases by ~66.8 K. The ON-current degradation and T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Lmax</inf> do not only define the device's thermal stability. Therefore, the thermal resistance is obtained by the slope of ΔT <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Lmax</inf> and DC power curves, which reflects the low thermal resistance in the multi-nanosheet device. Furthermore, the T <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Lmax</inf> of junctionless and inversion mode devices is compared at the same operational power. It is found ~ 100 K lower in junctionless devices due to weak lateral electric field intensity at the channel/drain interface.

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