Abstract
An F2 excimer laser at 157 nm has been used for the first time as an exposure source for high resolution photolithography with the self-developing resist nitrocellulose. Ablative development of the nitrocellulose was observed for 157-nm energy densities greater than 0.025 J/cm2. Stencil masks fabricated using electron beam lithography were used for contact photolithography, and mask features to 200 nm were reproduced. These are the smallest features yet reproduced from a mask with an optical, self-developing resist technology.
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