Abstract
The electron transport through the triple-barrier resonant tunnelling diode (TBRTD) has been studied by the self-consistent numerical method for the Wigner–Poisson problem. The electron flow through the TBRTD can be controlled by the gate voltage applied to one of the potential well regions. For different gate voltage values we have determined the current–voltage characteristics, potential energy profiles and electron density distribution. We have found the enhancement of the peak-to-valley ratio (up to ∼10), the appearance of the linear current versus bias voltage behaviour within the negative-differential resistance region and the bistability of the current–voltage characteristics. We provide a physical interpretation of these results based on the analysis of the self-consistent potential profiles and electron density distribution.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
