Abstract
The inversion-layer mobility, gate capacitance, transconductance and threshold voltage in highly doped silicon-on-insulator (SOI) n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) have been investigated for various SOI layer thicknesses (tSOI) using self-consistent calculations. It has been found for SOI MOSFETs with highly doped channels that, whenever tSOI (\\gtrsim2 nm) is reduced under the full-depletion condition, the current drive of SOI MOSFETs becomes higher than that of bulk MOSFETs because of the increase in the inversion-layer mobility. In such SOI MOSFETs, the total scattering rate of phonon and ionized impurity scatterings becomes lower with decreasing tSOI. These results are different from those of the previous work for SOI MOSFETs with low channel impurity concentration.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.