Self-consistent 3-D numerical modeling of a uniformly doped nanoscale FinFET using interpolating wavelets

Abstract

A three-dimensional numerical modeling of a uniformly doped nanoscale FinFET including quantum-mechanical effects has been developed. A self-consistent solution of 3D Poisson-Schrodinger equation has been obtained using multiresolution approach to achieve adaptively refined mesh that can be used to get a solution with the same level of accuracy of a reference, but with a considerable lower number of points. To the best of our knowledge, this is the first approach for the self-consistent solution to surface potential computations of nanoscale FinFET device using interpolating wavelets. It performs an efficient computation by dynamically adjusting the computational mesh in order to obtain surface potential variations during simulation. This method allows non-uniform grids and scales the CPU time linearly with the number of mesh points. The exact potential profile, subthreshold swing (S) and threshold voltage (V th) rolloff are estimated. The accuracy of the model has been verified with finite difference, finite element and experimental results. This method provides more accurate results than other existing methods.