Abstract
This paper presents a novel threshold voltage model for triple material gate-all-around TFET based on its surface potential that also includes the device depletion regimes. Analytical expressions for surface potential are derived using 2D Poison’s equation and parabolic approximation method. Electric Field and threshold voltage of the device are derived by considering the surface potential of source channel depletion regime. Threshold voltage roll off is then obtained by subtraction between short channel TFET and long channel TFET. Drain-induced barrier lowering of the proposed device is achieved using threshold voltage values for two different drains to source voltage values. Threshold voltage lies in a range between 0.6 and 0.8 V for different doping concentrations as obtained from simulation, which is less in comparison with other available TFET devices. The validity of the device model is tested using TCAD ATLAS Simulation tool.
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