Abstract
An innovative active pixel sensor (APS) suitable for real time X-ray imaging (fluoroscopy) using amorphous silicon (a-Si:H) thin film transistors (TFTs) and a transimpedance column amplifier for pixel signal readout are presented. Simulation results show that this new APS circuit can successfully compensate for variations in a-Si TFT characteristics under prolonged gate voltage stress. The readout is fast enough to fulfil the timing requirements of real-time fluoroscopy
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