Abstract
A new structure of SOI-LIGBT operated at thyristor mode with unique self-clamping character (TM-SOI LIGBT) integrated in SPICs has been studied and analyzed. We used 15 mum SOI layer and 3 mum SiO4, respectively to obtain a breakdown voltage exceeding 500 V. Comparison of not only a trade off between forward voltage drop and turn off loss but also a forward biased safe operating area (FBSOA) with conventional LIGBT based on SOI has been investigated. 2D Mix-mode numerical analysis using MEDICI shows that the proposed structure dramatically reduced the forward saturation voltage drop to about 21.3%, and turn off time 20%, with large FBSOA and has better current density when at on state and controllable current capability when at off state.
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