Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition

Abstract

The time evolution of self-assembled Ge islands, during low-pressure chemical vapor deposition (LPCVD)of Ge on Si at 650 Deg C using high growth rates, has been investigated by atomic force microscopy,transmission electron microscopy, and Rutherford backscattering spectrometry. We have found three different island structures The smallest islands are "lens-shaped" and characterized by a rather narrow size distribution, ~4nm high and ~20nm wide. Next to form are a distinct population of multifaceted "dome shaped" islands, up to 25nm high and 80-150 nm wide. Finally, the largest islands that form are square-based truncated pyramids with a very narrow size distribution ~50nm high and ~250nm wide. The pyramidal islands normally seen in the intermediate size range (~150nm) are not observed. The small lens-shaped islands appear to be defect free, while some of the multifaceted islands as well as all the large truncated pyramids contain misfit dislocations. The existence of multifaceted ialands, in the size range where multifaceted "dome shaped" islands have previously been reported, is attributed to the high growth rate used. Furthermore, under the growth conditions used, the truncated-pyramid-shaped islands are characterized by a very narrow size distribution.