Abstract

Chalcopyrites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. Copper–boron–selenium (CuBSe2) is a chalcopyrite material with a near-optimum band gap of ∼3.13 eV. Semiconductor CuBSe2 nanorods were successfully prepared via a relatively simple and convenient solvothermal route. The device parameters for a single junction CuBSe2 solar cell under AM 1.5 G are as follows: open circuit voltage of 310 mV, short-circuit current of 25.5 mA cm−2, fill factor of 24%, and a power conversion efficiency of 1.89%. Based on a series of comparative experiments under various reaction conditions, the probable formation mechanism of crystals CuBSe2 nanorods is proposed.

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