Abstract
Stannites are important contenders among thin-film solar cells due to their direct band gap and higher absorption coefficient. I2–II–IV–VI4 nanocrystals of Cu2ZnSnSe4 are stannite material with a near-optimum band gap of ∼1.5eV. Semiconductor Cu2ZnSnSe4 nanorods were successfully prepared via a relatively simple and convenient solvothermal route. The device parameters for a single junction Cu2ZnSnSe4 solar cell under AM1.5G are as follows: open circuit voltage of 308mV, short-circuit current of 29.9mA/cm2, fill factor of 27%, and a power conversion efficiency of 2.48%. Based on a series of comparative experiments under various reaction conditions, the probable formation mechanism of crystals Cu2ZnSnSe4 nanorods is proposed.
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