Self-aligned selective-epitaxial-growth Si/sub 1-x-y/Ge/sub x/C/sub y/ HBT technology featuring 170-GHz f/sub max/

K Oda,E Ohue,I Suzumura,R Hayami,K Washio,A Kodama,H Shimamoto

doi:10.1109/iedm.2001.979505

Self-aligned selective-epitaxial-growth Si/sub 1-x-y/Ge/sub x/C/sub y/ HBT technology featuring 170-GHz f/sub max/

K Oda, E Ohue + Show 5 more

https://doi.org/10.1109/iedm.2001.979505

Copy DOI

Publication Date: Dec 2, 2001

Citations: 14

Affiliation: Hitachi (Japan)

#Selective Epitaxial Growth #Heterojunction Bipolar Transistor + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

Si/sub 1-x-y/Ge/sub x/C/sub y/ selective epitaxial growth (SEG) was performed by cold-wall ultra-high-vacuum chemical vapor deposition (UHV/CVD), and a Si/sub 1-x-y/Ge/sub x/C/sub y/ layer with good crystallinity was produced by optimizing the growth conditions. As a result of applying Si/sub 1-x-y/Ge/sub x/C/sub y/ SEG to form the base of a self-aligned heterojunction bipolar transistor (HBT), device performance was significantly improved by suppression of B outdiffusion; namely, a maximum oscillation frequency of 174 GHz was obtained.

Full Text