An industrial 0.35 μm SiGe BiCMOS technology for 5 GHz WLAN featuring an improved selective epitaxial growth process

P Chevalier,H Ziad,J.-L Loheac,E Vestiel,J Craninckx,F De Pestel,G Pontioglu,S Guncer,M Fatkhoutdinov,F Yayil,P Coppens,B.S Ergun,E De Backer,M Tack,P Tasci,J Ackaert,A.I Kurhan

doi:10.1109/edmo.2001.974303

An industrial 0.35 μm SiGe BiCMOS technology for 5 GHz WLAN featuring an improved selective epitaxial growth process

P Chevalier, H Ziad + Show 15 more

https://doi.org/10.1109/edmo.2001.974303

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Publication Date: Nov 15, 2001

Citations: 2

Affiliation: ON Semiconductor (Belgium)

#GHz Wireless Local Area Networks #Wireless Local Area Networks + Show 8 more

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Abstract

A SiGe BiCMOS process with a double-polysilicon self-aligned Heterojunction Bipolar Transistor (HBT) fabricated by means of selective epitaxy has been developed. The selective epitaxial growth is improved with the use of an innovative oxy-nitride interpoly layer which increases the growth rate. The HBT features a current gain cut-off frequency f/sub T/ of 43 GHz and a maximum available cut-off frequency f/sub MAX/ of 80 GHz at a collector-emitter bias voltage of 3 V. N-p-n transistors are integrated in 0.35 /spl mu/m CMOS process with high quality RF passive components. A Low Noise Amplifier (LNA) designed in this technology for 5 GHz wireless local area networks (WLAN) demonstrated measurement data close to the simulated ones.

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