Self-timed Read Termination for Reduced Read Disturbance and Power Consumption in Large-scale Cross-point ReRAM Arrays

Abstract

We present a self-timed read termination (STRT) to improve read disturbance and reduce power consumption in a large cross-point ReRAM array. Due to the variability of ReRAM cells, a read current is forced to flow through the filament of memory cells for a time after the read decision is made, resulting in unnecessary power consumption and read disturbance. The STRT helps decrease the total read-stress time by approximately 75 % in fully integrated 16-kb cross-point ReRAM arrays. Moreover, the power consumption is decreased by 72.8 % throughout the all LRS 1-Mb ReRAM array when measured in fabricated 16-kb cross-point ReRAM using 350-nm CMOS technology.