Abstract
In the molecular beam epitaxy (MBE) growth of InAs quantum dots (QDs), we investigated the dot formation via the self size-limiting process. Accumulation of size-limited InAs QDs resulted in narrow inhomogeneous broadening of photoluminescence (PL) linewidth and low energy shift of PL peak position. Atomic force microscopy (AFM) and reflection high-energy electron-beam diffraction (RHEED) observations revealed the appearance of {136} facets on the side wall of size-limited InAs dots. It was proposed that the facet formation played an important role in the self size-limiting behavior.
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