Abstract
Excellent mechanical properties and the presence of piezoresistivity make single layers of transition metal dichalcogenides (TMDCs) viable candidates for integration in nanoelectromechanical systems (NEMS). We report on the realization of electromechanical resonators based on single-layer MoS2 with both piezoresistive and capacitive transduction schemes. Operating in the ultimate limit of membrane thickness, the resonant frequency of MoS2 resonators is primarily defined by the built-in mechanical tension and is in the very high frequency range. Using electrostatic interaction with a gate electrode, we tune the resonant frequency, allowing for the extraction of resonator parameters such as mass density and built-in strain. Furthermore, we study the origins of nonlinear dynamic response at high driving force. The results shed light on the potential of TMDC-based NEMS for the investigation of nanoscale mechanical effects at the limits of vertical downscaling and applications such as resonators for RF-communications, force and mass sensors.
Highlights
Excellent mechanical properties and the presence of piezoresistivity make single layers of transition metal dichalcogenides (TMDCs) viable candidates for integration in nanoelectromechanical systems (NEMS)
Our findings reveal the potential of atomically thin, monolayer MoS2 NEMS resonators for applications such as oscillators for RF communication circuits, mass, and force sensors, as well as the fundamental study of the mechanical degree of freedom and nonlinear dynamics in nanoscale systems
We show that the presence of piezoresistivity in MoS218 provides an alternative transduction mechanism that enhances the output electrical signal of MoS2 NEMS resonators
Summary
Excellent mechanical properties and the presence of piezoresistivity make single layers of transition metal dichalcogenides (TMDCs) viable candidates for integration in nanoelectromechanical systems (NEMS). The results shed light on the potential of TMDC-based NEMS for the investigation of nanoscale mechanical effects at the limits of vertical downscaling and applications such as resonators for RF-communications, force and mass sensors. One of the most often used transduction schemes in NEMS devices, the capacitive transduction scheme, based on the modulation of the capacitive coupling of the resonator to a gate electrode, has been previously applied to multilayer MoS28–10 Since it scales with the area of the resonator, its effectiveness is reduced by the downscaling of resonator dimensions, needed to decrease the resonator mass. Our findings reveal the potential of atomically thin, monolayer MoS2 NEMS resonators for applications such as oscillators for RF communication circuits, mass, and force sensors, as well as the fundamental study of the mechanical degree of freedom and nonlinear dynamics in nanoscale systems
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
