Abstract
Lanthanide ions have attracted great attention due to their distinct photonic properties. The optoelectronic properties and device performance are greatly affected by the interfacial coupling between the layered van der Waals heterostructure, fabricated with two or more transition metal dichalcogenide (TMD) layers. In this work, lanthanide-doped WS2/MoS2 layered heterostructures have been constructed through two synthesis steps. The doped thin films are highly textured nanosheets on wafers. Importantly, the as-prepared heterostructure exhibits efficient near-infrared emission in the range of the telecommunication window, owing to energy transfer between lanthanide ions in the two TMD layers. The use of the layered heterostructure allows the decrease of deleterious cross-relaxation due to homogeneous doping or concentration quenching. The energy transfer process was further elaborated in this work. The results suggest that lanthanide ions can effectively extend the emission band of TMD thin films and their heterostructures. The doped TMD heterostructure is highly favourable for constructing atomically thin near-infrared photonic devices.
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