Abstract
Resistance random access memory (ReRAM) has received attention as next-generation memory because of its excellent operating properties and high density integration capability as a crossbar array. However, the application of the existing ReRAM as a crossbar array may lead to crosstalk between adjacent cells due to its symmetric I–V characteristics. In this study, the self-rectifying effect of contact between amorphous In-Ga-Zn-O (a-IGZO) and TaOx was examined in a Pt/a-IGZO/TaOx/Al2O3/W structure. The experimental results show not only self-rectifying behavior but also forming-free characteristics. During the deposition of a-IGZO on the TaOx, an oxygen-rich TaOx interfacial layer was formed. The rectifying effect was observed regardless of the interface formation and is believed to be associated with Schottky contact formation between a-IGZO and TaOx. The current level remained unchanged despite repeated DC sweep cycles. The low resistance state/high resistance state ratio was about 101 at a read voltage of −0.5 V, and the rectifying ratio was about 103 at ±2 V.
Published Version
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