Abstract
GaAs/tungsten Schottky barrier mixer diodes have been fabricated in a self-passivated, grown guard layer configuration. These devices have exhibited 0.64 eV barrier voltages together with the ability to withstand nanosecond RF pulses in excess of 8 ergs with no resulting deterioration in noise figure performance. Such high burnout resistance properties are attributed to the absence of any significant metallurgical interaction between the GaAs and tungsten at temperatures as high as 600°C. The somewhat high noise figures exhibited by these devices are attributed to interface states, possibly arising from strain.
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