Abstract
Abstract We demonstrated metal-organic chemical vapor deposition of single-phase MgSiO3-orthopyroxene (-opx) and α-Mg2SiO4 films, and α-Mg2SiO4–MgO composite films with self-oriented growth on a polycrystalline AlN substrate using Mg acetylacetonate and tetraethyl orthosilicate precursors. We obtained (020)-oriented MgSiO3-opx films, (002)-oriented α-Mg2SiO4 films, and (021)-oriented α-Mg2SiO4–(200) MgO composite films at 22, 46, and 81 mol%MgO, respectively, at a deposition temperature of 1200 K and a total chamber pressure of 0.8 kPa. Maximum deposition rates of 42 and 131 μm h−1 were attained for the (020)-oriented MgSiO3-opx and (002)-oriented α-Mg2SiO4 films, respectively.
Published Version
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