Self-organized InGaN nanodots grown by metal-organic chemical vapor deposition system

Abstract

It has been demonstrated that self-organized InGaN nanodots can be vertically grown by utilizing metal-organic chemical vapor deposition epitaxy (MOCVD). We report the investigation of the characteristics of InGaN with various indium contents and the fabrication of self-organized InGaN nanodots will also be discussed. Using a temperature ramping growth method, self-organized InGaN nanodots were formed vertically protruding above the sample. It was found that typical height of these nanodots is around 45 nm with an average width of 5 nm. It was also found that the local density of the vertically grown self-organized InGaN nanodots could reach 8.2 × 1012 cm−2. These self-organized InGaN nanodots will result in a red shift in PL spectrum indicating that In droplets act as an indium source to form an InGaN intermediate layer near the heterointerface.