Self-Organized Eu-Doped GaN Nanocolumn Light-Emitting Diode Grown by RF-Molecular-Beam Epitaxy

Abstract

High-concentration doping of Eu ions working as luminescent centers in GaN is required to improve light output of optical devices. GaN nanocolumns can be used to achieve high crystallinity in high-concentration Eu-doped GaN (GaN:Eu). In this study, optical properties of a GaN:Eu nanocolumn grown by RF-plasma-assisted molecular-beam epitaxy (RF-MBE) are investigated and GaN:Eu nanocolumn light-emitting diodes (LEDs) are demonstrated. Suppression of yellow luminescence and concentration quenching of PL intensity are observed at RT for GaN:Eu nanocolumns. When the effect of Eu concentration on optical properties is analyzed using rate equation, an increase in the Eu concentration is observed to affect 5D0 lifetime corresponding to back transfer, and not the effective cross-section corresponding to transfer efficiency. Based on these results, GaN:Eu nanocolumn LEDs are fabricated on an n-type (111) Si substrate. Clear rectification characteristics and sharp red luminescence are observed. The light output increases with increasing Eu concentration up to a concentration of 6 × 1020 cm−3. These results suggested that GaN:Eu nanocolumns provide feasible crystal to realize novel optical devices.