Eu concentration dependence of Eu doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy

Abstract

Eu doped GaN (GaN:Eu) shows a sharp line emission and thermal stability of the emission wavelength. To improve the optical properties, GaN:Eu nanocolumns were grown on GaN nanocolumn platform with high crystalline quality by rf-plasma-assisted molecular beam epitaxy. Although it was revealed that an increase of Eu concentration brought about the polycrystalline growth, photoluminescence (PL) intensity from Eu3+ monotonically increased with increasing Eu concentration without concentration quenching, which suggests that the nanocolumn crystal is a valuable way to develop the novel optical devices utilizing GaN:Eu.