Abstract
Abstract Low intensity light ions (H + or He ++ ) irradiation of silicon introduced EPR Si–AA12 defect. Si–AA12 reveals close correlations with DLTS E1=E c −0.39 eV minority trap. Impurity interstitials or self-interstitial associated secondary defects, such as interstitial carbon (C i ) or aluminum (Al i ) or self-interstitial–oxygen complex (Si i –O i ), appear upon thermal annealing at 280–350 K and especially under injection at 77 K of Si–AA12 and E1 state. Strong 1:1 correlation between injection annealing of E1 and increasing C i in FZ-Si and sum of (Si i –O i )+C i as well observed reversible transformation of Si–AA12 and E1 onto (Si i –O i ) and their re-emission after annealing (Si i –O i ) allow to attribute these states to a isolated self-interstitial. Thermally stimulated capacitance data show negative U-properties of E1 predicted by theoretical calculations and supports this identification.
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