Abstract

The structural phase transformations under high pressure of ZnO and ZnS have been investigated by using theVogel-Krüger-Pollmann (VKP) scheme, in which theelectronic self-interaction correction to the local densityapproximation (LDA) is introduced in a non-self-consistentmanner within the pseudopotential approach. In these calculations, I have used highly optimized pseudopotentials and a plane-waveexpansion of the wavefunctions. Moreover, the electronic structuresof the zinc-blende (ZB) and rock-salt (RS) phases ofboth compounds have been similarly calculated. It has been foundthat the VKP scheme provides a highly improved description, relative to the LDA results, for the structural and electronicstructure properties of the considered systems. However, theso-calculated transition pressures of the ZB-to-RStransition for both ZnO and ZnS are found to besignificantly larger than the experimental data. RS-ZnO ispredicted to be an indirect-gap semiconductor, with a wide band gap of 4.2 eV.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.