Abstract
In this work we investigate a pseudo-random surface texturing technique of sapphire by means of inductively coupled plasma reacting ion etching in chlorine chemistry, for which no sophisticated lithographic process is required. Such a surface texturing technique, which we believe offers indicative promise for enhanced light extraction in deep ultraviolet light-emitting diodes has allowed us to texture sapphire samples having a surface larger than 1 cm2 with controlled structures. Fabrication parameters have been characterized, and textured Al 2 O 3 surfaces having submicron features, and nano-scale periodicity have been obtained. Performance, and characterization of our textured Al 2 O 3 surfaces is the hinge of addition work in progress.
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