Abstract
Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.
Highlights
Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging
Exhibiting a mobility that can exceed 200,000 cm2/Vs and a thermal conductivity that can reach 2,000 W/mK, graphene is extremely efficient at transporting energy[1,2]
While transfer of CVD graphene to silicon carbide (SiC) can capitalize upon the high thermal conductivity of the substrate, weak van der Waals bonding will result in a comparatively large thermal resistance at the interface (i.e., Kapitza resistance)[23,24,25,26]
Summary
Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. The same syntheses processes that provide scale, induce morphological imperfections that limit device performance Both epitaxial and CVD syntheses result in small regions of non-uniform layer number[7,8] that increase electrical resistance[9]. Strain can induce wrinkles limiting mobility for epitaxial devices[12,13] These morphological imperfections are shown to drive the self-heating and eventual failure of graphene devices. In contrast, possesses stronger bonding leading to a smaller thermal boundary resistance[27]
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