Quantitative scanning thermal microscopy of graphene devices on flexible polyimide substrates

Abstract

A triple-scan scanning thermal microscopy (SThM) method and a zero-heat flux laser-heated SThM technique are investigated for quantitative thermal imaging of flexible graphene devices. A similar local tip-sample thermal resistance is observed on both the graphene and metal areas of the sample, and is attributed to the presence of a polymer residue layer on the sample surface and a liquid meniscus at the tip-sample junction. In addition, it is found that the tip-sample thermal resistance is insensitive to the temperature until it begins to increase as the temperature increases to 80 °C and exhibits an abrupt increase at 110 °C because of evaporation of the liquid meniscus at the tip-sample junction. Moreover, the variation in the tip-sample thermal resistance due to surface roughness is within the experimental tolerance except at areas with roughness height exceeding tens of nanometers. Because of the low thermal conductivity of the flexible polyimide substrate, the SThM measurements have found that the temperature rise in flexible graphene devices is more than one order of magnitude higher than those reported for graphene devices fabricated on a silicon substrate with comparable dimensions and power density. Unlike a graphene device on a silicon substrate where the majority of the electrical heating in the graphene device is conducted vertically through the thin silicon dioxide dielectric layer to the high-thermal conductivity silicon substrate, lateral heat spreading is important in the flexible graphene devices, as shown by the observed decrease in the average temperature rise normalized by the power density with decreasing graphene channel length from about 30 μm to 10 μm. However, it is shown by numerical heat transfer analysis that this trend is mainly caused by the size scaling of the thermal spreading resistance of the polymer substrate instead of lateral heat spreading by the graphene. In addition, thermoelectric effects are found to be negligible compared to Joule heating in the flexible graphene devices measured in this work.