Abstract
Silicide/SiGe-based tube structures have been fabricated onto silicon by precise transformation from two-dimensional structures to three-dimensional objects. By using the strain in a pair of lattice-mismatched epitaxy layers, a method was developed to create the tube structure by their release from a substrate. The tube structures combining semiconductor (SiGe) and metallic silicide (NiSi 2) may find applications in advanced devices.
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