Abstract
The growth kinetics of four metal silicides formed by infrared laser heating, , , , and , were studied. Unfocused (1.4–2.5 mm radii) beams were scanned over thin metal films on Si substrates at different velocities in order to react large areas selectively over short periods of time. The silicides are essentially single‐phase , ,, and as identified by x‐ray diffraction. The scanned laser resulted in a time varying sample temperature which was incorporated in the evaluation of the activation energies for each metal silicide. The activation energies were determined by numerical evaluation of the integral expression describing the thickness as a function of time. The growth laws observed were parabolic in nature for all four metal silicides. This implied a diffusion‐limited reaction between the Si and the metal atom. The activation energy results were all within the range of previously published results for furnace reactions. The kinetics studies of , , and were the first of laser heated silicide formation. In light of the wide range of published work, our results can be interpreted as a verification of some of the published results for silicide growth and a presentation of a reproducible kinetics study of the formation of these metal silicides. The resistivities of the infrared laser‐heated silicides were comparable to those obtained from furnace reactions.
Published Version
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