Abstract
We fabricated a titanium oxide (TiO2) resistive memory device utilized to naturally erasable device with a simple cross-bar array structure inhibiting sneak paths using selecting property. The Al/TiO2/Al memory device showed conventional nonvolatile and bipolar resistive switching properties with a vacancy-based drift conduction procedure. The conducting filament could be removed through redistribution of the oxygen vacancy to the active bulk region resulting in self-erasable properties, which have made it possible to guide unwanted information to be removed naturally. This self-erasable memory device has the potential to be utilized for the storage of susceptible information which should be eliminated after a sufficient length of time.
Published Version
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