Abstract
AbstractBroadband photodetectors based on 2D layered materials provide great potential applications in night vision, sensing, and communications. However, it remains a challenge for detectors to achieve both high photoresponsivity and fast response. Here, a high‐sensitive photodetector based on ReS2/BP van der Waals (vdW) heterodiode with fast speed, rising time (τr) of 770 ns, and decay time (τd) of 760 ns under a 637 nm laser is reported. The detection range is covered from visible to mid‐wave infrared (MWIR) 0.405–3.753 μm. In the visible range, a high photoresponsivity of 107.1 AW−1, competitive specific detectivity (D*) of 1.89 × 1010 cm Hz1/2 W−1, and a low noise equivalent power of 3.03 × 10−14 W Hz−1/2 are obtained. In the MWIR the D* of 3.26 × 108 cm Hz1/2 W−1 is demonstrated in the photovoltaic model. Notably, the photodiode realizes a high external quantum efficiency of 71.8%, and a high power conversion efficiency of 2.0%. This work provides a way to design broadband response and fast‐speed self‐driven photodetectors with great potential applications in weak light intensity.
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