Abstract
Hall effect measurements on undopedAl0.2Ga0.8N/AlN/GaN/AlN heterostructures grown on 6H-SiC substrates were carried out as a function of thetemperature (30–300 K) and magnetic field (0–1.4 T). Measurements were carried outunder dark and after-illumination conditions. After the dark measurements, thesamples were illuminated with a blue light emitting diode for 30 min, and then thesame measurements were carried out for the after-illumination condition. Themagnetic field dependent Hall results were analyzed and the 2DEG contribution wasfound using the quantitative mobility spectrum analysis (QMSA) technique. Aself-consistent scattering analysis between the dark and illuminated conditions wasimplemented. The importance of this implementation was to find an indirect way tolocate more certain fit parameters, such as interface roughness parameters and thebackground impurity value, which cannot be found using dark measurement dataalone.
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