Abstract
In this study, we have investigated the ground state energy level of electrons in modulation doped GaAs / Al x Ga 1 - x As heterojunctions. For this purpose, Schrödinger and Poisson equations are solved self consistently using quantum genetic algorithm (QGA). In this way, we have found the potential profile, the ground state subband energy and their corresponding envelope functions, Fermi level, and the amount of tunneling charge from barrier to channel region. Their dependence on various device parameters are also examined.
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