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Abstract
A numerical model is introduced that self-consistently calculates the time dependent axial variations of photon density, carrier density and temperature in semiconductor lasers. The most important approximations are outlined. In order to illustrate the capability of the model, some results are shown for an asymmetrically coated DQW GaAs/GaAlAs edge emitting laser diode. The temperature rise at the facets and the corresponding profiles of carrier and photon density are calculated. The asymmetric behaviour of the profiles is discussed. The heating is calculated as a function of surface recombination velocity at the mirrors and as a function of injection current. The calculations provide insight into the process of facet heating and catastrophic optical damage. The calculations are confirmed by experimental investigations.
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