Abstract
Self-assembled GaAs nanowires have been grown on Si by molecular beam epitaxy withoutthe use of any outside metal catalyst. The growth occurs on Si facets obtained by thecleavage of Si(100) substrates. The growth has been obtained with or without Gapre-deposition. In both cases two kinds of nanowires have been obtained. The wires of thefirst type clearly present a Ga droplet at their free end and have a lattice structurethat is wurtzite for wide regions beneath the Ga droplet. The second type, incontrast, ends with pyramidally shaped GaAs and has a crystal lattice that is mainlyzincblende with only a few and small wurtzite regions, if any. The Ga-ended nanowiresare longer than the others and thinner on average. The experimental findingssuggest that the two types of nanowires grow after different growth processes.
Published Version
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