Abstract
The authors report epitaxial growth of dilute nitride GaNAsP nanowires (NWs) and GaAsP/GaNAsP core–shell nanowires on Si (111) by a self-catalyzed method. Different sizes of GaNAsP NWs were observed with various N content. Room-temperature photoluminescence (PL) is observed from the GaNAsP NWs. The spectral peak of the temperature-dependent PL shows an S-shape and indicates defect states in the bandgap. The room-temperature PL intensity increased after rapid thermal annealing. A growth model explains the observed diameters of GaAsP/GaNAsP core–shell.
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Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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